Spintronic materials and devices
We develop materials, measurements, and device concepts that use the spin degree of freedom for energy-efficient electronics, memory, AI hardware, and cryogenic systems.
Novel spintronic materials
We explore magnetic and spin-orbit materials that enable efficient spin generation, manipulation, and detection. Current interests include antiferromagnets, altermagnets, non-collinear magnets, van der Waals magnets, topological magnetic materials, and oxide/metal heterostructures.
These materials provide opportunities for ultrafast spin dynamics, robust magnetic states, unconventional transport, and new device concepts for memory and computing.
Magnetic memory for AI hardware
Magnetic tunnel junctions and voltage-controlled magnetic devices provide non-volatility, fast operation, and compatibility with CMOS integration. We explore how spintronic devices can support computing-in-memory, neuromorphic workloads, and robust electronics.
Our interests include MRAM, voltage-controlled magnetoelectric memory, stochastic magnetic devices, radiation-hardened nonvolatile memory, data-driven MRAM design, and device-to-algorithm co-design for efficient AI hardware.
Cryogenic spintronics for quantum technology
Quantum processors need local, low-power cryogenic memory and control electronics. We study superconducting diode memory and spintronic microwave concepts as possible building blocks for scalable cryogenic systems.
This direction connects superconductivity, spin-orbit torque, magnetic memory, and microwave devices.