Novel spintronic materials
Antiferromagnets, altermagnets, non-collinear magnets, van der Waals magnets, and oxide/metal heterostructures for efficient spin generation, dynamics, and readout.
Read moreWe study materials and devices that utilize the spin degree of freedom for energy-efficient electronics, memory, AI hardware, and quantum technologies.
Our group connects materials physics, device engineering, and computing architectures. The long-term goal is to translate spin-based phenomena into useful hardware platforms for electronics and computing.
Antiferromagnets, altermagnets, non-collinear magnets, van der Waals magnets, and oxide/metal heterostructures for efficient spin generation, dynamics, and readout.
Read moreMRAM, voltage-controlled magnetic memory, stochastic spintronic devices, radiation-hardened nonvolatile memory, and compute-in-memory concepts for AI hardware.
Read moreSuperconducting diode memory and spintronic microwave devices for scalable cryogenic and quantum information systems.
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Cheng Lab launches in the Department of Electrical and Computer Engineering at UMass Lowell.